Integrated cicuit technology - silicon.
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Words: 982
Pages: 4
(approximately 235 words/page)
Pages: 4
(approximately 235 words/page)
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showed first 75 words of 982 total
showed last 75 words of 982 total
can be used, the choice of elements being dependent on the particular doping requirements. Different doping concentrations are required for different devices, ranging from very light doping to very heavy doping. BIBLIOGRAPHY A. Amerasekera & C. Duvvury, ESD in Silicon Integrated Circuits, John Wiley & Sons, West Sussex.. J. Winzer, Linear Integrated Circuits, Saunders College Publishing, London. E. Hughes Revised by I. McKenzie Smith, Hughes Electrical Technology - Seventh Edition, Longman Scientific & Technical, Essex.
can be used, the choice of elements being dependent on the particular doping requirements. Different doping concentrations are required for different devices, ranging from very light doping to very heavy doping. BIBLIOGRAPHY A. Amerasekera & C. Duvvury, ESD in Silicon Integrated Circuits, John Wiley & Sons, West Sussex.. J. Winzer, Linear Integrated Circuits, Saunders College Publishing, London. E. Hughes Revised by I. McKenzie Smith, Hughes Electrical Technology - Seventh Edition, Longman Scientific & Technical, Essex.